| 发明名称 |
Semiconductor device, liquid crystal display device and method of manufacturing the semiconductor device |
| 摘要 |
A terminal interconnection 45 a including an aluminum alloy film 4 a and a nitrogen-containing aluminum film 5 a layered together is formed on a glass substrate 2 . Nitrogen-containing aluminum film 5 a in a contact portion 12 a within a contact hole 11 a exposing the surface of terminal interconnection 45 a has a predetermined thickness d<SUB>1 </SUB>determined based on a specific resistance of the nitrogen-containing aluminum film. The thickness of the nitrogen-containing aluminum film outside the contact portion is larger than that of the nitrogen-containing aluminum film within the contact portion. Thereby, a semiconductor device or a liquid crystal display device having a reduced contact resistance and an appropriate resistance against chemical liquid is achieved.
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| 申请公布号 |
US7012338(B2) |
申请公布日期 |
2006.03.14 |
| 申请号 |
US20040940822 |
申请日期 |
2004.09.15 |
| 申请人 |
ADVANCED DISPLAY INC. |
发明人 |
KUBOTA TAKESHI;TAKEGUCHI TORU;NAKAMURA NOBUHIRO |
| 分类号 |
H01L23/48;H01L23/522;G02F1/136;G02F1/1368;H01L21/768;H01L21/77;H01L21/84;H01L23/52;H01L27/12;H01L29/40;H01L29/41;H01L29/43;H01L29/786 |
主分类号 |
H01L23/48 |
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