Method of manufacturing a nonvolatile memory cell with triple spacers and the structure thereof

摘要

A method of manufacturing a nonvolatile memory cell with triple spacers and the structure thereof. A gate structure is formed on a substrate. Diffusion regions are formed in the substrate on either side of the gate structure. A linear oxide layer is formed on the gate structure and the substrate. A conformal nitride layer is formed on the linear oxide layer. The nitride layer and the linear oxide layer are partially etched back to form linear oxide spacers on the sides of the gate structure and nitride spacers on the sides of the linear oxide spacers. A conformal oxide layer is formed on the linear oxide spacers, the nitride spacers, the gate structure and the substrate. The oxide layer is partially etched back to form oxide spacers on the sides of the nitride spacers.