发明名称 Transconductance device employing native MOS transistors
摘要 A system on chip such as a radio receiver has reduced suceptibility to voltages in the bulk silicon by using gyrator elements in the receiver with each gyrator element including a plurality of current sources interconnected to provide output transconductance voltages, and a variable load for the current sources including first and second load resistors each serially connected with one other plurality of current sources. A variable resistance interconnects nodes of the load resistors with the variable resistance comprising a pair of native MOS transistors having low threshold voltages. In a preferred embodiment the first and second load resistors comprise first and second MOS transistors with the pair of native transistors serially connected between source elements of the first and second MOS transistors.
申请公布号 US7012487(B2) 申请公布日期 2006.03.14
申请号 US20010837897 申请日期 2001.04.18
申请人 BROADCOM CORPORATION 发明人 ALLOTT STEPHEN
分类号 H03H11/00;H03H11/04;H03H11/42 主分类号 H03H11/00
代理机构 代理人
主权项
地址