发明名称 Integrated circuit device having I/O structures with reduced input loss
摘要 The present invention is an input/output (I/O) structure for an integrated circuit device which increases the input signal energy transfer characteristic and allows for increased operating frequency of the device. The I/O structure includes a conductive region in a doped region below a semiconductor bond pad. The I/O structure also includes a tapped region coupled to a supply voltage. The I/O structure may also include an output driver transistor layout with a tapped source region to decrease a parasitic series resistance between a drain region and a source voltage.
申请公布号 US7012330(B1) 申请公布日期 2006.03.14
申请号 US19990372879 申请日期 1999.08.12
申请人 RAMBUS INC. 发明人 SIDIROPOULOS STEFANOS;LOUIS-CHANDRAN JOE-ANAND
分类号 H01L23/48 主分类号 H01L23/48
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