| 摘要 |
After a polysilicon semiconductor film 5 and a first gate oxide film 6 are formed on a transparent insulating substrate 1, the semiconductor film 5 and the first gate oxide film 6 are patterned into an island shape to form an island part. At this time, an overhang part 8 of a visor shape is formed where side end surfaces of the first gate oxide film 6 and the semiconductor film 5 are not aligned and an end part of the first gate oxide film 6 projects slightly from a position of a side end surface of the semiconductor film 5. The overhang part 8 is removed, for example, during cleaning, which thus enhances yield. |
