发明名称 |
Method of forming a lamination film pattern and improved lamination film pattern |
摘要 |
In a method of forming an electrically conductive lamination pattern, an insulating film is formed on a surface of a chromium-containing bottom layer, before an aluminum-containing top layer is formed over the insulating film, so that the insulating film separates the aluminum-containing top layer from the chromium-containing bottom layer. A first selective wet etching process is carried out for selectively etching the aluminum-containing top layer with a first etchant. A second selective wet etching process is carried out for selectively etching the chromium-containing bottom layer with a second etchant in the presence the insulating film which suppresses a hetero-metal-contact-potential-difference between the chromium-containing bottom layer and the aluminum-containing top layer during the second selective wet etching process.
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申请公布号 |
US7012029(B2) |
申请公布日期 |
2006.03.14 |
申请号 |
US20030745636 |
申请日期 |
2003.12.29 |
申请人 |
NEC LCD TECHNOLOGIES, LTD. |
发明人 |
KATOH TSUYOSHI;KIDO SYUUSAKU;MAEDA AKITOSHI |
分类号 |
G02F1/1343;H01L21/302;G02F1/1362;H01L21/28;H01L21/3205;H01L21/3213;H01L21/336;H01L21/768;H01L21/77;H01L21/84;H01L23/52;H01L23/532;H01L27/12;H01L29/786 |
主分类号 |
G02F1/1343 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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