发明名称 |
Heterojunction field effect transistor |
摘要 |
A heterojunction field effect transistor operative from the micro wave band to the millimeter wave band has a gate recess structure formed in a manner such that its eye-empty areas have a significant effect on the voltage durability of the transistor. The eye-empty areas extend from a gate electrode to a source electrode as well as to a drain electrode and are formed by at least two material layers having different impurity concentrations, thereby making it possible to obtain an improved heterojunction field effect transistor having a reduced series resistance and an increased voltage durability.
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申请公布号 |
US7012286(B2) |
申请公布日期 |
2006.03.14 |
申请号 |
US20020255407 |
申请日期 |
2002.09.26 |
申请人 |
MURATA MANUFACTURING CO., LTD. |
发明人 |
INAI MAKOTO;SASAKI HIDEHIKO |
分类号 |
H01L29/812;H01L31/0328;H01L21/338;H01L29/423;H01L29/778;H01L29/80;H01L31/0336;H01L31/072;H01L31/109 |
主分类号 |
H01L29/812 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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