发明名称 Wafer-level diamond spreader
摘要 An embodiment of the present invention is a technique to heat spread at wafer level. A silicon wafer is thinned. A chemical vapor deposition diamond (CVDD) wafer processed. The CVDD wafer is bonded to the thinned silicon wafer to form a bonded wafer. Metallization is plated on back side of the CVDD wafer. The CVDD wafer is reflowed to flatten the back side.
申请公布号 US7012011(B2) 申请公布日期 2006.03.14
申请号 US20040876511 申请日期 2004.06.24
申请人 INTEL CORPORATION 发明人 CHRYSLER GREGORY M.;HU CHUAN
分类号 H01L21/30;H01L21/46;H01L21/48;H01L21/78;H01L23/373;H01L29/15;H01L31/0312 主分类号 H01L21/30
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