发明名称 |
Wafer-level diamond spreader |
摘要 |
An embodiment of the present invention is a technique to heat spread at wafer level. A silicon wafer is thinned. A chemical vapor deposition diamond (CVDD) wafer processed. The CVDD wafer is bonded to the thinned silicon wafer to form a bonded wafer. Metallization is plated on back side of the CVDD wafer. The CVDD wafer is reflowed to flatten the back side.
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申请公布号 |
US7012011(B2) |
申请公布日期 |
2006.03.14 |
申请号 |
US20040876511 |
申请日期 |
2004.06.24 |
申请人 |
INTEL CORPORATION |
发明人 |
CHRYSLER GREGORY M.;HU CHUAN |
分类号 |
H01L21/30;H01L21/46;H01L21/48;H01L21/78;H01L23/373;H01L29/15;H01L31/0312 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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