发明名称 |
Semiconductor device with a high breakdown voltage |
摘要 |
There is disclosed a power transistor comprising a semiconductor substrate having a PN junction exposed on a major surface of the semiconductor substrate, and a semiinsulative polysilicon film formed on the major surface, the polysilicon film covering the PN junction, the polysilicon film containing at least one of carbon, oxygen, and nitrogen, and the polysilicon film having a thickness of about 3000 ANGSTROM .
|
申请公布号 |
US5031021(A) |
申请公布日期 |
1991.07.09 |
申请号 |
US19860905958 |
申请日期 |
1986.09.11 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
BABA, YOSHIRO;TSURU, KAZUO;AKIYAMA, TATSUO;KOSHINO, YUTAKA |
分类号 |
H01L29/73;H01L21/331;H01L29/04;H01L29/06;H01L29/40;H01L29/732 |
主分类号 |
H01L29/73 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|