SEMICONDUCTOR MEMORY DEVICE AND PRECHARGE SIGNAL GENERATING CIRCUIT OF THIS,申请号KR20040071883-传众专利搜索

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发明名称	SEMICONDUCTOR MEMORY DEVICE AND PRECHARGE SIGNAL GENERATING CIRCUIT OF THIS
摘要
申请公布号	KR20060023057(A)	申请公布日期	2006.03.13
申请号	KR20040071883	申请日期	2004.09.08
申请人	SAMSUNG ELECTRONICS CO., LTD.	发明人	KIM, CHAN YOUNG;KO, TAI YOUNG
分类号	G11C7/12	主分类号	G11C7/12
代理机构		代理人
主权项
地址

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