METHOD OF FABRICATING A TRENCH ISOLATION LAYER IN SEMICONDUCTOR DEVICE,申请号KR20040113150-传众专利搜索

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发明名称	METHOD OF FABRICATING A TRENCH ISOLATION LAYER IN SEMICONDUCTOR DEVICE
摘要
申请公布号	KR100562327(B1)	申请公布日期	2006.03.13
申请号	KR20040113150	申请日期	2004.12.27
申请人	DONGBUANAM SEMICONDUCTOR INC.	发明人	KIM, BYUNG HO
分类号	H01L21/76	主分类号	H01L21/76
代理机构		代理人
主权项
地址

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