| 摘要 |
An image sensor is disclosed which comprises a plurality of photodiodes and device isolation regions. The photodiodes are arranged along the surface of a semiconductor substrate, and each photodiode has a first region of a first conductivity type formed along the semiconductor substrate, a second region of a second conductivity type different from the first conductivity type which second region is formed on the first region, and a signal extraction region of the second conductivity type formed on the second region. The device isolation regions are so formed as to electrically separate the second regions of adjacent photodiodes, and each device isolation region comprises a first trench formed between the second regions of the adjacent photodiodes and an oxide film which is formed on the first trench in the vicinity of the surfaces of the second regions. The oxide film is wider than the first trench.
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