Plasma etching method for obtaining high selectivity in using low plasma source power,申请号KR20030094413-传众专利搜索

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发明名称	Plasma etching method for obtaining high selectivity in using low plasma source power
摘要
申请公布号	KR100557674(B1)	申请公布日期	2006.03.10
申请号	KR20030094413	申请日期	2003.12.22
申请人		发明人
分类号	H01L21/3065	主分类号	H01L21/3065
代理机构		代理人
主权项
地址

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