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发明名称
A method for forming isolation layer of semiconductor device
摘要
申请公布号
KR100560288(B1)
申请公布日期
2006.03.10
申请号
KR19990061794
申请日期
1999.12.24
申请人
发明人
分类号
H01L21/76
主分类号
H01L21/76
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