发明名称 METHOD FOR READING OUT OR IN A STATUS FROM OR TO A FERROELECTRICAL TRANSISTOR OF A MEMORY CELL AND MEMORY MATRIX
摘要 The state is read out from the ferroelectric transistor or stored in the ferroelectric transistor. During the read-out or storage of the state, at least one further ferroelectric transistor in the memory matrix is driven in such a way that it is operated in its depletion region.
申请公布号 KR100559009(B1) 申请公布日期 2006.03.10
申请号 KR20037008447 申请日期 2003.06.20
申请人 发明人
分类号 G11C11/22 主分类号 G11C11/22
代理机构 代理人
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