| 摘要 |
FIELD: engineering of data storage devices, technology for performing non-destructive reading of data and method for inducing polarization onto pairs of memory sub-cells. ^ SUBSTANCE: device has a set of memory cells, first and second sets of electrodes, while electrodes of second set are directed orthogonally to electrodes of first set and are made in form of parallel doubled electrodes, positioned in mutually parallel recesses made in electrodes of first set, while in recess between electrodes of first set and parallel doubled electrodes of second set, on both sides of these doubled electrodes, memory cells are formed with sub-cells. Methods describe process of non-destructive reading of data from aforementioned device and possible induction of polarization onto pairs of memory sub-cells. ^ EFFECT: shorter time needed for accessing data storage device, prevented influence of piezo-electric activation of memory cells of certain memorizing matrix on other memorizing matrices included in composition of packet, improved signal-noise ratio. ^ 3 cl, 23 dwg |
