| 摘要 |
PROBLEM TO BE SOLVED: To reduce a reactive current caused by non-luminous recombination created on the processed surface of a device processed by etching or the like to reduce characteristic deterioration of the device (to prevent a threshold current or the like from increasing), even if the surface of the device is processed by etching or the like to have a structure with excellent temperature characteristics at a low threshold current, in the semiconductor device containing at least one layer of group III-V mixed crystal semiconductor layer comprising a plurality of group V elements simultaneously containing As and N. SOLUTION: An n-AlGaAs lower clad layer 103, a GaAs light guide layer 104, an InGaNAs active layer 105, a GaAs light guide layer 106, and a first upper clad layer 107 of p-AlGaAs are exposed with areas other than stripe areas removed in the manufacturing process of the semiconductor device, and the exposed surface portion of the InGaNAs active layer 105 where N atoms are replaced with As atoms is an InGaAs layer 108. COPYRIGHT: (C)2006,JPO&NCIPI
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