METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE OBTAINED WITH SUCH A METHOD
摘要
The-invention relates to a method of manufacturing a semiconductor device (1.0) with a dual gate field effect transistor, in which method a semiconductor body (1) of a semiconductor material is provided at a surface thereof with a source region (2) and a drain region (3) of a first conductivity type and with a channel region (4) of a second conductivity type opposite to the first conductivity type between the source region (2) and the drain region (3) and with a first gate region (5) separated from the surface of the semiconductor body by a first gate dielectric (6) above the channel region (4) and with a second gate region (7) situated opposite to the first gate region (5) and formed within a recess (20) in an opposite surface of the semiconductor body (1) so as to be separated from the channel region (4) by a second gate dielectric (8), wherein the recess (20) is formed by means of a local change of the doping (9) of the channel region (4) and by performing an etching step starting from the opposite surface of the semiconductor body (1).
申请公布号
WO2006024979(A1)
申请公布日期
2006.03.09
申请号
WO2005IB52660
申请日期
2005.08.10
申请人
KONINKLIJKE PHILIPS ELECTRONICS N.V.;SURDEANU, RADU;HIJZEN, ERWIN;IN 'T ZANDT, MICHAEL, A., A.;HUETING, RAYMOND, J., E.
发明人
SURDEANU, RADU;HIJZEN, ERWIN;IN 'T ZANDT, MICHAEL, A., A.;HUETING, RAYMOND, J., E.