Epitaxial structure and fabrication method of nitride semiconductor device

摘要

A structure and a fabrication method for a nitride semiconductor device are provided so that the device has a lower defect density resulted from incompatible lattice constants between its constituent layers. The nitride semiconductor device contains a substrate, at least a first intermediate layer made of aluminum-gallium-indium-nitride (Al_1-x-yGa_xIn_yN) at least a second intermediate layer made of silicon-nitride (Si_iN_j) or magnesium-nitride (Mg_mN_n), and a nitride epitaxial layer. The second intermediate layer is used to form a mask so that the subsequent epitaxial growth would have a smaller defect density and a better epitaxial quality.