| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a dielectric thin-film capacitor by which such a dielectric thin-film capacitor can be obtained that has a smooth surface, less cracking and a high dielectric constant. <P>SOLUTION: The method for manufacturing a dielectric thin-film capacitor includes a step to form a lower conductor 30 on a substrate 10, a step to form a precursor film by applying a material solution to the lower conductor 30, a step wherein first heat treatment is conducted at a temperature 50-150°C higher than the crystallization temperature of the precursor film to crystallize the precursor film so as to form a dielectric thin film 40, a step to form upper conductors 51 and 52 on the dielectric thin film 40, and a step to conduct second heat treatment at a temperature higher than that of the first heat treatment by 100°C or more. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
