| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor memory device, having high accuracy of reading data, utilizing the polarization state of a ferroelectric film. SOLUTION: In reading data, corresponding to the polarization state from the ferroelectric film 22 that can generate upward or downward residual polarization, a bias voltage is applied to a control gate electrode 23, to read the data. For example, supposing that the state that downward residual polarization exists represents data "1", and the state that upward or almost zero residual polarization exists represents data "0". In particular, by defining that the state that almost zero residual polarization exists represents data "0", the precision of reading is enhanced since the read current for data "0" is almost constant. Also the precision of reading is further improved, if imprinting is induced to one piece of the data (for example, data "1") in advance. COPYRIGHT: (C)2006,JPO&NCIPI
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