| 摘要 |
PROBLEM TO BE SOLVED: To reduce the leakage current in a solid-state imaging device. SOLUTION: The solid-state imaging device comprises a first conductivity type semiconductor region, a second conductivity type signal storage region provided in the first conductivity-type semiconductor region and storing signal charges obtained through photoelectric conversion, a second conductivity type drain region provided at a position spaced apart downward from the surface of the first conductivity-type semiconductor region, and a read-out gate electrode provided on the surface of the first conductivity-type semiconductor region between the second conductivity-type signal storage region and the second conductivity type drain region via a gate insulation film. COPYRIGHT: (C)2006,JPO&NCIPI
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