A GaAs monolithic waveguide switch and system for low power consumption and high frequency switching wherein a single GaAs chip is flip-chip mounted onto a waveguide slot and inserted between interconnecting waveguides to provide single pole single throw switching. The GaAs chip includes an array of MESFETs along with connecting electrodes configured to provide low loss in the biased state and high loss in the unbiased state. The use of a single GaAs monolithic chip provides improved RF performance and manufacturability over discrete devices and provides lower power consumption as compared with silicon PIN diode waveguide switches.
申请公布号
US5119052(A)
申请公布日期
1992.06.02
申请号
US19900601557
申请日期
1990.10.23
申请人
TEXAS INSTRUMENTS INCORPORATED
发明人
WITKOWSKI, LARRY C.;TSERNG, HUA Q.;VOGES, ROBERT C.;RHOADS, CHARLES M.;KESLER, OREN B.