| 摘要 |
PROBLEM TO BE SOLVED: To obtain a large group III nitride crystal by a method and apparatus for growing the group III nitride crystal, in which the generation of clogging at the tip end of a supplying tube for supplying a group III metal can be suppressed. SOLUTION: The method for growing the group III nitride crystal comprises reacting the group III metal and nitrogen in a melt containing an alkali metal. In the method for continuously growing the group III nitride crystal by supplying the group III metal from a vessel accommodating the group III metal 7 into the melt 11, the gas-liquid interface between the group III metal and nitrogen in a supplying member is moved to a site where the temperature is set to be lower than the crystal growth temperature of the group III nitride except a group III metal supply time. COPYRIGHT: (C)2006,JPO&NCIPI
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