| 发明名称 |
Method for forming IMD films |
| 摘要 |
A method for forming IMD films. A substrate is provided. A plurality of dielectric films are formed on the substrate, wherein each of the dielectric layers are deposited in-situ in one chamber with only one thermal cycle.
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| 申请公布号 |
US2006051973(A1) |
申请公布日期 |
2006.03.09 |
| 申请号 |
US20040937215 |
申请日期 |
2004.09.09 |
| 申请人 |
CHENG YI-LUNG;LIAO MIAO-CHENG;WANG YING-LANG |
发明人 |
CHENG YI-LUNG;LIAO MIAO-CHENG;WANG YING-LANG |
| 分类号 |
H01L21/469 |
主分类号 |
H01L21/469 |
| 代理机构 |
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