| 摘要 |
A method and apparatus are provided for measuring the apodization of projection optics for use in a lithographic apparatus, the projection optics having an object plane where, in use, a reticle is placed, a pupil plane, and an image plane where, in use, a wafer is placed. The method includes placing one or more Appropriate apertures in said object plane for creating a substantially uniform light distribution, illuminating the or each aperture and measuring the intensity distribution at a plane which is conjugate to the pupil plane in order to calculate the apodization of the projection optics.
|
