发明名称 |
Method for making a semiconductor device that includes a metal gate electrode |
摘要 |
A method for making a semiconductor device is described. That method comprises forming on a substrate a dielectric layer and a sacrificial structure that comprises a first layer and a second layer, such that the second layer is formed on the first layer and is wider than the first layer. After the sacrificial structure is removed to generate a trench, a metal gate electrode is formed within the trench.
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申请公布号 |
US2006051957(A1) |
申请公布日期 |
2006.03.09 |
申请号 |
US20040936114 |
申请日期 |
2004.09.07 |
申请人 |
BRASK JUSTIN K;KAVALIEROS JACK;DOCZY MARK L;METZ MATTHEW V;DATTA SUMAN;SHAH UDAY;DOYLE BRIAN S;CHAU ROBERT S |
发明人 |
BRASK JUSTIN K.;KAVALIEROS JACK;DOCZY MARK L.;METZ MATTHEW V.;DATTA SUMAN;SHAH UDAY;DOYLE BRIAN S.;CHAU ROBERT S. |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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