Vertical insulated gate transistor and manufacturing method

摘要

A vertical insulated gate transistor is manufactured by providing a trench ( 26 ) extending through a source layer ( 8 ) and a channel layer ( 6 ) towards a drain layer ( 2 ). A spacer etch is used to form gate portions ( 20 ) along the trench side walls, a dielectric material ( 30 ) is filled into the trench between the sidewalls gate portions (20), and a gate electrical connection layer ( 30 ) is formed at the top of the trench electrically connecting the gate portions ( 20 ) across the trench.