| 摘要 |
A memory device includes a non-volatile memory core that includes a memory cell array and a page buffer configured to store data to be programmed in the memory cell array. The device also includes a test data input buffer configured to receive test data from an external source, and control circuit that controls the non-volatile memory core and the test data input buffer. The control circuit is configured to load test data from the test data buffer to the page buffer, to program the loaded test data in the page buffer in the memory cell array, and to retain the test data in the page buffer for subsequent programming of the memory cell array. The device may further include a test data output buffer configured to receive data read from the memory cell array, and the control circuit may be operative to convey the read data from the test data output buffer to an external recipient.
|
