摘要 |
<p>A transistor-based sensor unit which has, in order to enhance ease of analysis, a transistor unit (103) provided with a substrate (108), a source electrode (111) and a drain electrode (112) provided on the substrate (108), a channel (113) as a current passage between the source electrode (111) and the drain electrode (112), and a detecting sensing gate (117), wherein a gate body (115) fixed to the substrate (108) and a sensing unit (116) that can electrically conduct with the gate body (115) fixed with a specific material (123) selectively interacting with a material to be detected are provided to the detecting sensing gate (117) of the sensor unit for detecting the material to be detected.</p> |
申请人 |
JAPAN SCIENCE AND TECHNOLOGY AGENCY;MITSUBISHI CHEMICAL CORPORATION;MATSUMOTO, KAZUHIKO;KOJIMA, ATSUHIKO;NAGAO, SATORU;KATOU, MASANORI;IFUKU, YASUO;MITANI, HIROSHI;SAITOU, HARUYO |
发明人 |
MATSUMOTO, KAZUHIKO;KOJIMA, ATSUHIKO;NAGAO, SATORU;KATOU, MASANORI;IFUKU, YASUO;MITANI, HIROSHI;SAITOU, HARUYO |