发明名称 |
METHOD FOR FORMING POLYCRYSTALLINE SILICON THIN FILM TRANSISTOR |
摘要 |
A method for forming a polycrystalline silicon thin film transistor. The method includes the steps of: forming a polycrystalline silicon layer including multiple protrusions by crystallizing the amorphous silicon layer according to a crystallization method in which the multiple protrusions are formed due to collision between crystal grains; patterning the polycrystalline silicon layer in an active pattern which includes only two protrusions of the multiple protrusions, which are apart from each other and located at both sides of a gate electrode-forming area; applying a barrier layer on the patterned polycrystalline silicon layer while partially covering the two protrusions; and forming a source electrode and a drain electrode at the protrusions of the polycrystalline silicon layer formed at both sides of the gate electrode-forming area by ion-implanting dopants into a resultant lamination.
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申请公布号 |
US2006051904(A1) |
申请公布日期 |
2006.03.09 |
申请号 |
US20050085953 |
申请日期 |
2005.03.22 |
申请人 |
BOE HYDIS TECHNOLOGY CO., LTD. |
发明人 |
SON KYOUNG S.;RYU MYUNG K.;PARK JAE C.;KIM EOK S.;LEE JUN H.;KWON SE Y.;IM JANG S. |
分类号 |
H01L21/84;H01L21/20 |
主分类号 |
H01L21/84 |
代理机构 |
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地址 |
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