发明名称 High reliability triple redundant memory element with integrated testability and voting structures on each latch
摘要 In a preferred embodiment, the invention provides a circuit and method for a high reliability triple redundant latch with integrated testability. Three settable memory elements set an identical logical value into each settable memory element. After the settable memory elements are set, three voting structures with inputs from the first, second, and third settable memory elements, determine the logical value held on each of the settable memory elements. Data may be scanned into and out of the second settable memory element. Data is propagated through the buffer into the third settable memory element. The third settable memory element may be used to scan data out of the triple redundant latch. The propagation delay through a latch is the only propagation delay of the triple redundant latch.
申请公布号 US2006050550(A1) 申请公布日期 2006.03.09
申请号 US20040934035 申请日期 2004.09.03
申请人 PETERSEN JOHN T;NASER HASSAN;LOTZ JONATHAN P 发明人 PETERSEN JOHN T.;NASER HASSAN;LOTZ JONATHAN P.
分类号 G11C11/00 主分类号 G11C11/00
代理机构 代理人
主权项
地址