发明名称 |
Double layer polysilicon gate electrode |
摘要 |
A method for forming a microelectronic product and the microelectronic product resulting from the method both employ a bilayer gate electrode. The bilayer gate electrode employs: (1) a first layer formed of a random oriented polycrystalline silicon material; and (2) a second layer laminated to the first layer and formed of a columnar oriented polycrystalline silicon material. The gate electrode provides enhanced performance to a semiconductor device within which it is formed.
|
申请公布号 |
US2006049470(A1) |
申请公布日期 |
2006.03.09 |
申请号 |
US20040936271 |
申请日期 |
2004.09.07 |
申请人 |
CHEN CHIA-LIN;HUANG MING-JIE;CHEN CHIEN-HAO;LEE TZE-LIANG;CHEN SHIH-CHANG |
发明人 |
CHEN CHIA-LIN;HUANG MING-JIE;CHEN CHIEN-HAO;LEE TZE-LIANG;CHEN SHIH-CHANG |
分类号 |
H01L29/76 |
主分类号 |
H01L29/76 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|