SEMICONDUCTOR DEVICE AND METHOD OF FORMING A SEMICONDUCTOR DEVICE

摘要

A high voltage/power semiconductor device (100) has at least one active region (1) having a plurality of high voltage junctions electrically connected in parallel. At least part of each of the high voltage junctions is located in or on a respective membrane (2) such that the active region (1) is provided at least in part over plural membranes (2). There are non-membrane regions (3) between the membranes (2). The device has a low voltage terminal (4) and a high voltage terminal (5). At least a portion of the low voltage terminal (4) and at least a portion of the high voltage terminal (5) are connected directly or indirectly to a respective one of the high voltage junctions.