发明名称 |
SILICONE STRUCTURE MANUFACTURING METHOD, MOLD MANUFACTURING METHOD, SILICONE STRUCTURE, INK JET RECORDING HEAD, IMAGE FORMING APPARATUS AND SEMICONDUCTOR DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a silicon structure manufacturing method capable of forming a fine structure with high precision, a mold manufacturing method, a silicone structure, an ink jet recording head, an image forming apparatus and a semiconductor device. <P>SOLUTION: Trench etching is applied to a silicon substrate having a patterned oxide film 114 formed thereon to form a groove 118 demarcated by a wall part 122. Further, the oxide film 114 is removed. Furthermore, a burr 121 formed to an upper part of the wall part 122 is removed by applying dry etching to the entire surface of the wall part. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
申请公布号 |
JP2006062148(A) |
申请公布日期 |
2006.03.09 |
申请号 |
JP20040245647 |
申请日期 |
2004.08.25 |
申请人 |
FUJI XEROX CO LTD |
发明人 |
FUKUKAWA ATSUSHI;MURATA MICHIAKI |
分类号 |
B29C41/40;B41J2/14;B41J2/145;B41J2/15;B41J2/16;B81C1/00;H01L21/76;H01L41/09;H01L41/187;H01L41/22;H01L41/333 |
主分类号 |
B29C41/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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