发明名称 SILICONE STRUCTURE MANUFACTURING METHOD, MOLD MANUFACTURING METHOD, SILICONE STRUCTURE, INK JET RECORDING HEAD, IMAGE FORMING APPARATUS AND SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a silicon structure manufacturing method capable of forming a fine structure with high precision, a mold manufacturing method, a silicone structure, an ink jet recording head, an image forming apparatus and a semiconductor device. <P>SOLUTION: Trench etching is applied to a silicon substrate having a patterned oxide film 114 formed thereon to form a groove 118 demarcated by a wall part 122. Further, the oxide film 114 is removed. Furthermore, a burr 121 formed to an upper part of the wall part 122 is removed by applying dry etching to the entire surface of the wall part. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006062148(A) 申请公布日期 2006.03.09
申请号 JP20040245647 申请日期 2004.08.25
申请人 FUJI XEROX CO LTD 发明人 FUKUKAWA ATSUSHI;MURATA MICHIAKI
分类号 B29C41/40;B41J2/14;B41J2/145;B41J2/15;B41J2/16;B81C1/00;H01L21/76;H01L41/09;H01L41/187;H01L41/22;H01L41/333 主分类号 B29C41/40
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