| 摘要 |
PROBLEM TO BE SOLVED: To obtain a laser having a wavelength of 501 nm by internal resonator type sum-frequency mixing using one semiconductor laser as an excitation source in a semiconductor laser-excited solid-state laser. SOLUTION: Excitation light 15 emitted from a semiconductor laser 1 is condensed by a lens 2 and cylindrical lenses 3 and 4 and then excites both an Nd:YAG crystal 8 and an Nd:YVO<SB>4</SB>crystal 9. A portion between a first reflection mirror 5 and a third reflection mirror 7 serves as a laser resonator using the induced emission transition of a wavelength of 946 nm of the Nd:YAG crystal 8. A portion between a second reflection mirror 6 and the third reflection mirror 7 serves as a laser resonator using induced the emission transition of a wavelength of 1,064 nm of the Nd:YVO<SB>4</SB>crystal 9. KTP crystal 10 is located on an optical path common to these two laser resonators, and laser light having a wavelength of 501 nm is generated by internal resonator type sum-frequency mixing to finally obtain output light 16. COPYRIGHT: (C)2006,JPO&NCIPI |
