| 摘要 |
PROBLEM TO BE SOLVED: To provide an epitaxial SiC film having no step bunching at its surface, and to provide a device that uses the film wherein a leak current is low and mobility of an MOS interface is high. SOLUTION: In the epitaxial SiC film grown on the off-cut plane of an SiC substrate in a hexagonal crystal structure, the off-cut plane of the SiC substrate has an off-cut angle of≥0.5°and≤10°, from a face (0001); and the crystal direction of the off-cut plane is one direction of≤±7.5°, from any one among 12 kinds of equivalent <21-30> directions ([21-30], [-2-130], [2-310], [-23-10], [12-30], [-1-230], [1-320], [-13-20], [-3120], [3-1-20], [-3210] and [3-2-10]) of the SiC substrate. COPYRIGHT: (C)2006,JPO&NCIPI
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