| 摘要 |
PROBLEM TO BE SOLVED: To reduce the wiring resistance in a semiconductor device having a silicide film and, in addition, to reduce the variation of the wiring resistance. SOLUTION: Before a metallic film is deposited on the surface of silicon used for forming the silicide film in a supersonic semiconductor device using cobalt silicide or nickel silicide, a chemical oxide film is formed on the surface of the silicon after a natural oxide film is removed from the surface of the silicon by performing a wet etching process. COPYRIGHT: (C)2006,JPO&NCIPI
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