| 摘要 |
PURPOSE:To provide a new transparent electrode film whose electric resistivity is extremely low, and light transmissivity is extremely high, and in which etching property is not damaged upon photolithography and a material used for it. CONSTITUTION:A transparent electrode film comprises indium oxide as a matrix, 1 to 20weight% of tin oxide, and 0.05 to 5weight% of titanium oxide. A material used for producing said transparent electrode film such as a sintered body for vacuum evaporating the transparent electrode by sintering indium oxide powder which contains 1 to 20weight% of tin oxide, and 0.05 to 5weight% of titanium oxide; or pulverunt body for the transparent electrode, obtained by pulverizing the sintered body; or an alloy, for vacuum evaporating the transparent electrode, which contains 60 to 98.9weight% of indium, 1 to 20weight% of tin, and 0.1 to 20weight% of titanium. |
