| 摘要 |
<p>An ashing method and an ashing apparatus by which film quality deterioration of a porous low-K film exposed on a wafer is prevented and resist can be surely removed from the wafer. The ashing apparatus introduces gas into a dielectric plasma generating chamber (14), excites the gas to generate plasma, and performs plasma processing by the gas plasma on an object (S) to be processed by using the low-k film. The ashing gas introduced form a gas control part (20) is an inert gas to which H<sub</p> |
