| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a film of predetermined film thickness at good reproducibility in deposition with a batch type CVD device, by suppressing variations in film thickness that depends on the number of product wafers. SOLUTION: A deposition device 100 comprises a growth oven 101 in which a product wafer 107 and dummy wafer 109 are stored, a boat 105 where the product wafer 107 and the dummy wafer 109 are set, and a heater 111 provided along an oven wall 103, outside the growth oven 101. The deposition device 100 also comprises a gas supply system comprising a high-k material supply pipe 113 and an SiO<SB>2</SB>material supply pipe 115, and a control unit 121 which controls supplying of gas from the gas supply system to the growth oven 101. COPYRIGHT: (C)2006,JPO&NCIPI
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