RAW MATERIAL SOLUTION FOR CVD USED FOR PRODUCING LANTHANOID-BASED METAL-CONTAINING THIN FILM AND METHOD FOR PRODUCING THIN FILM USING THE SAME

摘要

PROBLEM TO BE SOLVED: To stably prepare a multicomponent lanthanoid-based multiple oxide thin film having a desired composition. SOLUTION: A CVD (chemical vapor deposition) raw material for producing the thin film comprising a lanthanoid-based metal(s) and the other metal(s) is obtained by dissolving a compound expressed by the formula of Ln(β-dik)3-L...(I) and an organometallic compound comprising the other metal(s) into a solvent, and in the CVD raw material, aΔTG graph obtained by applying the compound in the formula (I) to thermogravimetric balance analysis (TG) has only one vaporization point peak. A method for producing the thin film uses the same. In formula (I), Ln denotes a lanthanoid-based metal atom;β-dik denotes aβ-diketone such as dipyvaloylmethane (DPM), diisobutyrylmethane, isobutyrylpyvaloylmethane, 2,2,6,6-tetramethyl-3,5-oxtane dione (TMOD), acetylacetone, 6-ethyl-2,2-dimethyl-3,5-octane dione, 5-methyl-2,4-hexane dione and 5,5-dimethyl-2,4-hexane dione; and L denotes a neutral ligand such as 1,10-phenanthroline, 2,2'-bipyridyl and their derivatives. COPYRIGHT: (C)2006,JPO&NCIPI