发明名称 Solid-state imaging device driving method
摘要 Photosensitive cells each includes a photodiode ( 1 ), a transfer gate ( 2 ), a floating diffusion layer portion ( 3 ), an amplifying transistor ( 4 ), and a reset transistor ( 5 ). Drains of the amplifying transistors ( 4 ) of the photosensitive cells are connected to a power supply line ( 10 ), and a pulsed power supply voltage (VddC) is applied to the power supply line ( 10 ). Here, a low-level potential (VddC_L) of the power supply voltage has a predetermined potential higher than zero potential. Specifically, by making the low-level potential (VddC_L) higher than channel potentials obtained when a low level is applied to the reset transistors ( 5 ), or channel potentials obtained when a low level is applied to the transfer gates ( 2 ), or channel potentials of the photodiodes ( 1 ), a reproduced image with low noise is read.
申请公布号 US2006050161(A1) 申请公布日期 2006.03.09
申请号 US20050532992 申请日期 2005.04.28
申请人 INAGAKI MAKOTO;MATSUNAGA YOSHIYUKI 发明人 INAGAKI MAKOTO;MATSUNAGA YOSHIYUKI
分类号 H01L27/146;H04N5/335;H04N5/341;H04N5/357;H04N5/363;H04N5/369;H04N5/374;H04N5/3745;H04N5/376;H04N5/378 主分类号 H01L27/146
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