| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To allow a non-volatile memory to perform high-speed read-out and assure a larger number of rewriting times. <P>SOLUTION: The semiconductor integrated circuit has a non-volatile memory region (PGM) where information storage is performed by a difference in threshold voltages, and a second non-volatile memory region (DAT). The first non-volatile memory region is given a difference in any one condition among an erase verify judging memory gate voltage, erase verify judging memory current, write verify judging memory gate voltage, write verify judging memory current, erase voltage, erase voltage impression period, write voltage, and write voltage impression period, with respect to the second non-volatile memory region, so that the first non-volatile memory region is made faster in the read-out speed of the memory information than in the second non-volatile memory region, and the second non-volatile memory region is assured of a larger number of rewrite times than that in the first non-volatile memory region. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
