POWER DEVICE HAVING SOURCE OF TRENCH BASE AND GATE ELECTRODE

摘要

PROBLEM TO BE SOLVED: To further improve the on-resistance of a breakdown voltage of a trench type power semiconductor device among other device characteristics. SOLUTION: A power semiconductor device includes a plurality of trenches formed in a semiconductor body and each trench includes one or a plurality of electrodes formed inside. Particularly, according to an embodiment of the present invention, the plurality of trenches of the semiconductor device include one or a plurality of gate electrodes, can include one or the plurality of gate electrodes or one or a plurality of source electrodes, or can include a combination of both of the gate electrode and the source electrode formed inside. The trenches and the electrode can have various depths in the semiconductor body. COPYRIGHT: (C)2006,JPO&NCIPI