发明名称 SURFACE-EMISSION WAFER, ITS MANUFACTURING METHOD AND BURN-IN METHOD OF SURFACE-EMISSION WAFER
摘要 PROBLEM TO BE SOLVED: To simplify a burn-in process and to reduce cost in a surface-emission wafer, and a manufacturing method and a burn-in method of the wafer. SOLUTION: The surface-emission wafer is provided with a substrate 10 and a plurality of surface-emission elements 1 formed on the substrate 10. Each surface-emission element 1 includes a light emitting element 20, first and second electrodes 30 and 32 driving the light emitting element 20 and a rectifying element 40. The rectifying element 40 is connected in parallel between the first and the second electrodes 30 and 32, and has a rectifying operation in a direction opposite to the light emitting element 20. A plurality of the surface-emission elements 1 are connected in series in a direction with which forward directions of the light emitting elements 20 are matched. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006066845(A) 申请公布日期 2006.03.09
申请号 JP20040273351 申请日期 2004.09.21
申请人 SEIKO EPSON CORP 发明人 NISHIDA TETSURO;ONISHI HAJIME
分类号 H01S5/183;G01R31/30;H01L21/66;H01S5/026 主分类号 H01S5/183
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