| 摘要 |
PROBLEM TO BE SOLVED: To provide an epitaxial wafer manufacturing method capable of preventing a skin layer effectively from becoming smaller in thickness than a target thickness when it is cooled down in a case wherein the skin layer formed of a group III nitride compound is formed. SOLUTION: A growth substrate is arranged in a reaction vessel, organic metal gas of a group III metal diluted with a carrier gas is used as a group III metal source, and a semiconductor layer of the group III nitride compound is epitaxially grown on the growth substrate through an MOVPE method using ammonia gas as a nitrogen source. The epitaxial wafer manufacturing method is characterized by growing the skin layer in a skin layer growing process so as to make its thickness equal to the sum of its final target thickness and a compensatory thickness compensating for a thickness reduction which occurs in the skin layer in a cooling process due to the decomposition of a nitride forming the skin layer. COPYRIGHT: (C)2006,JPO&NCIPI
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