| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid source etching device and a method for carrying out dry etching by a simple device configuration. SOLUTION: An electrode 12 having a function for generating high frequency plasma and a sample holder 16 for storing a sample 14 of the object of etching treatment are set in an etching chamber 10, and a solid source 18 for etching gas is also arranged on the sample holder 16. Furthermore, gas 20 for electric discharge is introduced to the etching chamber 10. When high frequency power is applied from the electrode 12 to the gas 20 for electric discharge, and plasma for the gas 20 for electric discharge is generated, the solid source 18 is struck by the plasma, components of the solid source 18 are integrated into gas, and reactive etching gas is generated. This reactive etching gas is integrated into plasma when the high frequency power is applied from the electrode 12, and the dry etching of the sample 14 is carried out by the plasma. COPYRIGHT: (C)2006,JPO&NCIPI
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