| 摘要 |
PROBLEM TO BE SOLVED: To simulate and validate constitutional conditions of a surface-emitting laser device, where the number of semiconductor multilayer film layers, the number of quantum well layers, the relative value in gain peaks of a reflector and a quantum well at room temperature or the like can be improved in output. SOLUTION: A vertical resonance type surface emitting laser comprises a laminate structure having a pair of distribution Bragg-reflection-type semiconductor multilayer film reflectors provided on and under an active layer which is formed on a semiconductor substrate for emitting laser light from the side of an n-type multilayer film reflector 104. A p-type multilayer film reflector 108 comprises 39 or more pairs of p-type AlGaAs with different composition alternately laminated, the n-type multilayer film reflector 104 comprises n-type AlGaAs with different composition alternately laminated, and the number of laminates is smaller than the number of laminates of the reflector 108. COPYRIGHT: (C)2006,JPO&NCIPI
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