| 摘要 |
Polycrystalline AlN 3 is deposited on the surface of an SiO<SUB>2 </SUB>film ( 2 ) by a sputtering method, and a mask is formed. An Si-doped n-GaN layer 5 is then formed over the mask thus formed. Subsequently, an n-type cladding layer ( 6 ), which is formed from Si-doped n-type Al<SUB>0.1</SUB>Ga<SUB>0.9</SUB>N (silicon concentration 4x10<SUP>17 </SUP>cm<SUP>-3</SUP>, thickness 1.2 mum), an n-type light-trapping layer ( 7 ), which is formed from Si-doped n-type GaN, a multiple quantum well layer ( 8 ), which is formed from an In<SUB>0.2</SUB>Ga<SUB>0.8</SUB>N well layer and an Si-doped In<SUB>0.05</SUB>Ga<SUB>0.95</SUB>N barrier layer, a cap layer ( 9 ), which is formed from Mg-doped p-type Al<SUB>0.2</SUB>Ga<SUB>0.8</SUB>N, a p-type light-trapping layer ( 10 ), which is formed from Mg-doped p-type GaN, a p-type cladding layer ( 11 ), which is formed from Mg-doped p-type Al<SUB>0.1</SUB>Ga<SUB>0.9</SUB>N, and a p-type contact layer ( 12 ), which is formed from Mg-doped p-type GaN, are grown in sequence to form an LD layer structure.
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